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 (R)
EMIF10-COM01
IPAD.
TM
EMI FILTER INCLUDING ESD PROTECTION
MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required: Computers and printers Communication systems Mobile phones
s s s
DESCRIPTION The EMIF10-COM01 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences. The EMIF10 flip-chip packaging means the package size is equal to the die size. That's why EMIF10-COM01 is a very small device. Additionally, this filter includes an ESD protection circuitry which prevents the protected device from destruction when subjected to ESD surges up to BENEFITS EMI symetrical (I/O) low-pass filter Very low PCB space consuming: 2 2.64 x 2.64 mm Very thin package: 0.63 mm High efficiency in ESD suppression on both input & output PINS (IEC61000-4-2 level 4). High reliability offered by monolithic integration
s s s s s
Flip Chip package
PIN CONFIGURATION (Ball Side)
1 E D C B
01 06
2
02 07
3
03 08
4
04 09
5
05 010
COMPLIES WITH FOLLOWING STANDARD: IEC61000-4-2 level 4 15 KV (air discharge) 8 kV (contact discharge) BASIC CELL CONFIGURATION
Low-pass Filter
GND GND GND GND GND I6 I1 I7 I2 I8 I3 I9 I4 I10 I5
Input
Output
A
RI/O = 200 Cinput = 45 pF
ASD is a trademark of STMicroelectronics.
January 2002 - Ed: 5A
1/5
EMIF10-COM01
Filtering Behavior
EMIF10-COM01: Typical S21(dB) measurement on line I10/O10
0.00 dB -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 -50.00 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M f/Hz 1.0G 3.0G
Capacitance versus reverse applied voltage
C(pF) 50 40 30 20 10 0 1 2 VR(V) 3 4 5 F=1MHz Vosc=30mV
Note: Spikes at high frequencies are induced by the PCB layout
Analog Crosstalk: Measurements
Crosstalk Behavior
EMIF10-COM01: Typical A1/A2 crosstalk measurement
0.00 dB -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 -50.00 -55.00 -60.00 -65.00 -70.00 -75.00 -80.00 1.0M
TEST BOARD
50
EMIF10 COM01
out2
in1
50
Vg
3.0M
10.0M
30.0M
100.0M f/Hz
300.0M
1.0G
3.0G
Rise Time: Measurement
Rise Time
EMIF10-COM01
In
Out
Vout
Square signal Generator Vc = 2.8V
Vin
100k
Vout
Vin
2/5
EMIF10-COM01
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol VPP Tj Top Tstg Parameter and test conditions ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharg Junction temperature Operating temperature range Storage temperature range Value 15 8 125 -40 to + 85 -55 to +150 Unit kV C C C
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VBR IRM VRM VCL Rd IPP RI/O Cin Parameters Breakdown voltage Leakage current @ VRM Stand-off voltage
VCL VBR VRM IRM IR
I
Clamping voltage Dynamic impedance Peak pulse current Series resistance between Input & Output Input capacitance per line
slope : 1 / R d
V
IPP
Symbol VBR IRM Rd RI/O Cin tLH At 0V bias Vout = 2.8V IR = 1mA
Test conditions
Min 6
Typ 8
Max 10 500
Unit V nA
VRM = 3V per line IPP = 10A, tp = 2.5s (see note 1) 180 1 200 45 Rload = 100k
220 50 25
pF ns
3/5
EMIF10-COM01
APLAC MODEL
200R in MODEL = demif10 out MODEL = demif10
Demif10 model BV = 7 IBV = 1m CJO = 25p M = 0.3333 RS = 1 VJ = 0.6 TT = 100n
sub
PCB grounding recommendations In order to ensure a good efficiency in terms of ESD protection and filtering behavior, we recommend to implement microvias (100 m dia.) between the GND bumps and the GND layer. GND bumps can be connected together in PCB layer 1, and in addition, if possible, use through hole vias (200 um dia.) in both sides of filter to improve contact to GND (layer). This layout will minimize the distance to the ground and thus parasitic inductances. In addition, we recommend to have GND plane wherever possible.
ORDERING CODE
EMIF
10
-
COM
01
Version EMI Filter Nb of lines For communication
4/5
EMIF10-COM01
PACKAGE MECHANICAL DATA DIE SIZE
500
All dimensions in m
2640
s
s
s
s
s
Die size: (2640 50) x (2640 50) Die height (including bumps): 650 65 Bump diameter: 315 50 Pitch: 500 50 Weight: 9.3mg
2640
MARKING
300
300
(R)
diam 400 2640
FET Y WW
2640
s
Y W W: Date code
PACKING: EMIF10-COM01 is delivered in Tape & Reel (7 inches reel); one Tape & Reel contains 5000 dice.
Note: More packing information are available in the application note AN1235: "Flip-Chip package description and recommendations for use"
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
650


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